Apparatus and methods to provide power management for memory devices

ABSTRACT

An apparatus, such as a nonvolatile solid-state memory device, may, in some implementations, include access line bias circuitry to set a bias level associated with a deselected access line(s) of a memory core in response to mode information. In one approach, access line bias circuitry may use linear down regulation to change a voltage level on deselected access lines of a memory core. A memory access device, such as a host processor, may be provided that is capable of dynamically setting a mode of operation of a memory core of a memory device in order to manage power consumption of the memory. Other apparatuses are also provided.

CROSS-REFERENCE TO RELATED APPLICATION

The present Application for Patent is a continuation of U.S. patentapplication Ser. No. 16/102,534 by Barkley et al., entitled “Apparatusand Methods to Provide Power Management for Memory Devices,” filed Aug.13, 2018, which is a continuation of U.S. patent application Ser. No.15/633,316 by Barkley et al., entitled “Apparatus and Methods to ProvidePower Management for Memory Devices,” filed Jun. 26, 2017, which is acontinuation of U.S. patent application Ser. No. 14/703,668 by Barkleyet al., entitled “Apparatus and Methods to Provide Power Management forMemory Devices,” filed May 4, 2015, which is a continuation of U.S.patent application Ser. No. 14/457,039 by Barkley et al., entitled“Apparatus and Methods to Provide Power Management for Memory Devices,”filed Aug. 11, 2014, which is a continuation of U.S. patent applicationSer. No. 13/605,538 by Barkley et al., entitled “Apparatus and Methodsto Provide Power Management for Memory Devices,” filed Sep. 6, 2012,assigned to the assignee hereof, and each of which is expresslyincorporated by reference in its entirety herein.

BACKGROUND Field

The disclosed structures and/or techniques relate generally to memorydevices and, more particularly, to apparatus and methods for managingpower consumption within memory devices.

Description of the Related Art

There is a general desire for electronic components to consumerelatively low amounts of power to perform their intended function(s).In some applications, this desire may be more pronounced. For example,in electronic devices in which energy may be limited (for example,battery powered devices, etc.), device use time between charges may beextended if components are used that consume less power. Reduced powerconsumption in an electronic device may also be beneficial in that itmay result in less heat generation within the device. In addition,reduction of power consumption within an electronic device may alsoreduce an amount of electric energy used to perform an application, aswell as the associated cost of that energy. Reduction of energy costsmay be pronounced in large operations (for example, data centers thattypically operate a relatively large number of computing devices and/orstorage devices within an area, etc.). Nonvolatile solid-state memorydevices, and/or systems that use them, may comprise one example ofapparatus that may benefit from a reduction in power consumption.

BRIEF DESCRIPTION OF THE FIGURES

Non-limiting and non-exhaustive implementations will be described withreference to the following figures, wherein like reference numeralsrefer to like parts throughout the various figures unless otherwisespecified.

FIG. 1 is a block diagram illustrating a computing system according toan example implementation;

FIG. 2 is a schematic diagram illustrating a linear down regulatorcircuit according to an example implementation;

FIG. 3 is a block diagram illustrating a multiple-core nonvolatilememory apparatus according to an example implementation; and

FIG. 4 is a flowchart illustrating a method for operating a computingsystem according to an example implementation.

DETAILED DESCRIPTION

Reference throughout this specification to “one implementation,” “animplementation,” or “certain implementations” means that a particularfeature, structure, or characteristic described in connection with adescribed implementation(s) may be included in at least oneimplementation of claimed subject matter. Thus, appearances of thephrase “in one example implementation,” “in an example implementation.”or “in certain example implementations” in various places throughoutthis specification are not necessarily all referring to the sameimplementation(s). Furthermore, particular features, structures, orcharacteristics may be combined in one or more implementations.

Embodiments of claimed subject matter may include methods and/orapparatus (for example, an individual apparatus or a combination ofapparatus or components thereof) for performing operations. An apparatusmay be specially constructed for desired purposes and/or an apparatusmay comprise a general-purpose computing device capable of operating inaccordance with a computer program stored in memory. A program may bestored in memory, such as, but not limited to, any type of diskincluding floppy disks, optical disks, compact disc read only memories(CD-ROMs), magnetic-optical disks, read-only memories (ROMs), randomaccess memories (RAMs), nonvolatile memories such as electricallyprogrammable read-only memories (EPROMs), electrically erasable andprogrammable read only memories (EEPROMs) and/or FLASH memories, phasechange memories (PCM) and/or any other type of media suitable forstoring electronic instructions.

A memory typically may comprise a non-transitory device. In thiscontext, a non-transitory memory may include a device that is tangible,meaning that the device has a concrete physical form, although thedevice may change one or more of its physical states. Thus, for example,non-transitory refers to a device remaining tangible despite a change instate.

In describing embodiments of claimed subject matter, the term “bit”corresponds to a binary digit of data, such as represented by a state ofa binary digital data signal, which is sometimes also referred to as alogic signal, a binary signal, a logic state, or a binary state. Thevalue of a bit, a fraction of a bit, or multiple bits may be stored byprogramming (for example, writing) a memory cell, such as a singletransistor, for example, to one of a plurality of data states. As usedherein, plurality means two or more. For example, in a single levelmemory cell (SLC or SLC cell), the cell might be erased/programmed to afirst (for example, logic 1) data state or a second (for example, logic0) data state. Additionally, multiple binary digital data signals and/ormultiple data states comprising individual binary digital data signalsand/or data states mayx be organized and/or aggregated to construct (forexample, assemble) a “symbol,” which may collectively represent, forexample, two bits, four bits, eight bits, 10 bits, and so forth. In oneexample, a 2-bit symbol may have a binary value of 00, 01, 10, or 11. Insome cases, a single memory cell may be selectively programmed to arespective data state representing any one of those values. For example,a 00 value for a 2-bit symbol may be stored by programming a memory cellto a respective one of four possible data states (for example,corresponding to a respective range of threshold voltage levels). In asimilar manner, a particular value of a O-bit symbol (for example, 0101)may be stored by programming one or more memory cells to a respectiveone of 16 possible data states, and a particular value of an 8-bitsymbol (for example, 0000 0110) may be stored by programming one or morememory cells to a respective one of 256 different data states, and soforth. Any of the foregoing symbols may be communicated as one or moremeasurable physical properties (for example, an acoustic, current,radiation, and/or voltage level) of, for example, one or more datasignals.

Memory may be employed in a variety of contexts. As an example, memorymay be included in a computing system. In this context, the termcomputing system refers to at least a processor and memory coupled by abus. Likewise, in this application, the terms memory, memory system,memory module, memory device and/or memory apparatus are usedinterchangeably unless the context of usage indicates otherwise. Amemory cell, however, refers to a unit of storage within a memory and amemory array refers to an array of memory cells. Typically, memory cellsof an array comprise a memory core. It will be understood, however, thata memory, memory system, memory module, memory device and/or memoryapparatus may also include other circuitry or components to enable useof the memory cells, for example. Likewise, a memory subsystem refers toa sub-portion of a memory system.

In an example implementation, an apparatus in the form of a nonvolatilememory device may communicate with one or more processors or othermemory access devices via (for example, through) a plurality ofassociated interfaces. A nonvolatile memory device may, for example,comprise a single channel memory device or a multi-channel memorydevice. Two or more of a plurality of interfaces may comprise asubstantially similar type or differing types. By way of non-limitingexample, in certain implementations, one interface may comprise aparallel interface while another interface may comprise a serialinterface. A nonvolatile memory device may, for example, comprise aphase change memory (PCM), charge storage memory (such as that commonlyreferred to as flash memory), or the like or any combination thereof,though claimed subject matter is not limited to such examples.

It is of course understood that claimed subject matter is not limited inscope to a particular embodiment, implementation, or example which maybe provided primarily for purposes of illustration. Rather, a variety ofhardware, firmware, or software embodiments, or combinations thereof,are possible (other than software per se) and are intended to beincluded within the scope of claimed subject matter. Therefore, althoughaspects of claimed subject matter may be described below with referenceto one or more examples or illustrations, it is to be understood thatany examples or illustrations so described are intended to benon-limiting with respect to claimed subject matter.

FIG. 1 is a block diagram illustrating an apparatus in the form of acomputing system 10 according to an example implementation. As shown,the computing system 10 includes a memory access device, such as aprocessor 12, and a nonvolatile memory device 14. The processor 12 isable to access the nonvolatile memory 14 to perform, for example,information storage and/or retrieval functions. In some embodiments, thenonvolatile memory 14 may comprise a packaged device having externalnodes (for example, contacts, terminals or the like) to be coupled tothe processor 12 and/or other memory access devices, such as in anexterior environment. In some implementations, the nonvolatile memory 14may be implemented in a common interoperable platform-type structure(for example, chip, substrate, or board), such as with the processor 12.Communication between the host processor 12 and the nonvolatile memory14 may be direct or it may be through or utilize a chipset, directmemory access (DMA) logic, or some other intermediary circuitry orlogic.

In some embodiments, the nonvolatile memory 14 may be capable ofoperating in multiple modes of operation. In addition, the nonvolatilememory 14 may permit a memory access device, such as the host processor12, to set a mode of operation of the nonvolatile memory 14 (forexample, permitting a memory access device to change or maintain a modeof operation). In some embodiments, the nonvolatile memory 14 may have adefault mode of operation that may be used in an absence of receivingmode information from the processor 12. In at least one implementation,for example, the nonvolatile memory 14 may be capable of operating in alower-latency read/write mode or in a lower-power read mode. Thenonvolatile memory 14 may be capable of operating in other modes ofoperation as well. In one embodiment, the lower-latency read/write modehas lower latency for writes than the lower-power read mode, and thelower-power read mode has lower power consumption than the lower-latencyread/write mode.

In one embodiment, the nonvolatile memory 14 has two modes of operation:(a) a higher-voltage mode; and (b) a lower-voltage mode. Thehigher-voltage mode supports both reads and writes, but has higher powerconsumption, higher leakage currents, and the like, than thelower-voltage mode. The lower-voltage mode of operation supports onlyread operations, but consumes much less power than the higher-voltagemode. To perform a write operation while in the lower-voltage mode, thenonvolatile memory 14 transitions from the lower-voltage mode to thehigher-voltage mode, which results in latency. Accordingly, thehigher-voltage mode can be considered to be a lower-latency mode, andthe lower-voltage mode can be considered to be a lower-power mode.

During operation of the computing system 10, the processor 12 may readinformation from and/or write information to the nonvolatile memory 14.In some implementations, the processor 12 may be capable of dynamicallysetting (for example, modifying) a mode of operation of one or morememory cores (for example, one or more memory arrays) of the nonvolatilememory 14 to manage power consumption within the nonvolatile memory 14,for example. The dynamically set mode is changeable from among two ormore operational modes, that is, modes that permit reading and/orwriting of data, rather than merely changing mode from a normaloperational mode and a non-operational mode, such as a standby mode. Theprocessor 12 may be programmed to evaluate read and/or write activityinvolving the nonvolatile memory 14 and determine a mode of operationfor one or more memory cores of the nonvolatile memory 14 based, atleast in part, thereon. For example, if a series of write operationsthat does not involve a large number of memory write operations on arelative basis may be expected for a memory core of the nonvolatilememory 14, the processor 12 may choose to maintain a memory core in alower-latency read/write mode or, if in a lower-power read mode, tochange to a lower-latency read/write mode. Similarly, if a mix of readand write operations may be expected that does involve a large number ofmemory write operations on a relative basis, the processor 12 may chooseto maintain a memory core in a lower-latency read/write mode or, if in alower-power read mode, to change to a lower-latency read/write mode. Ifread operations are predominantly expected with an occasional occurrenceof a large number of write operations, for example, the processor 12 maychoose to operate the nonvolatile memory 14 in a lower-power read modeto reduce power consumption. Specific details may vary, of course, witha variety of implementation related parameters, such as number of cells,amount of power consumed, amount of latency, etc. In this manner,nonetheless, the processor 12 may be capable of managing, at least tosome extent, in a specific implementation, for example, apower/performance tradeoff associated with use of the nonvolatile memory14. The processor 12 may provide mode information to the nonvolatilememory 14 that identifies a mode of operation for the nonvolatile memory14, such as may be driven by the processor 12, for example. In at leastone embodiment, the processor 12 may be housed within a package thatincludes one or more nodes to be coupled to the nonvolatile memory 14.

With reference to FIG. 1, the nonvolatile memory 14 may include: acommand interface 20 including command decode functionality 22, anaddress register 24, an input/output register 26, an overlay window 28,access line bias circuitry (for example, word line bias circuitry 30),and a memory core 32. The command interface 20, via a command decodefunctionality 22 for example, may be operative to receive commands fromthe processor 12, decode the commands, and perform actions to implementthe commands. The command interface 20 and its command decodefunctionality 22 may be implemented in hardware, software, firmware, ora combination thereof (other than software per se). An address register24 may be operative to store addresses received from the processor 12for use during read and/or write operations (referred to collectivelyherein as “information transfer operations”). An input/output register26 may store, for example, information to be written into and/orinformation that has been read from the memory core 32 duringinformation transfer operations.

The overlay window 28 may comprise a memory space that overlays asub-area of the memory core 32 (for example, it may be mapped into thememory address space) and may allow device commands or state sequencesto be entered without necessarily directly writing them to memory. Thecommand interface 20 may include, for example, mode registers that maypermit the overlay window 28 to be enabled, for example. The processor12 may write information to one or more of mode registers of the commandinterface 20 and may enable the overlay window 28. After the overlaywindow 28 has been enabled, it may be accessed like another section ofthe memory core 32, for example. As shown in FIG. 1, the overlay window28 may be coupled to the address register 24 to receive addressinformation and/or to the input/output register 26 to receive storedstate information at identified addresses.

The memory core 32 may include a plurality of memory cells that areoperatively accessible via access lines, which commonly may also bereferred to as word lines in some implementations. Typically, memorycells within a memory core 32 may be physically arranged in rows and/orcolumns that correspond to word lines and/or data lines (which maycommonly also be referred to as bit lines in some implementations),respectively, but claimed subject matter is not limited to such aphysical arrangement. That is, other physical arrangements are possibleand are included within the scope of claimed subject matter.

A memory cell of the memory core 32 may be programmed to one of two ormore data states, capable of representing, for example, one or more bitsof state information. In some implementations, the nonvolatile memory 14may allow a single memory cell of the memory core 32 to be accessedduring an information transfer operation. In other implementations, thenonvolatile memory 14 may permit multiple memory cells, such as thosecommonly coupled to a single word line of the memory core 32, to beaccessed during an information transfer operation. In still otherimplementations, the nonvolatile memory 14 may permit most or all ofmemory cells coupled to a word line to be accessed during an informationtransfer operation. It should be appreciated that claimed subject matteris not limited by a particular fashion in which memory cells may beaccessed in a memory core.

In addition to memory cells, access (for example, word) lines and/ordata (for example, bit) lines, the memory core 32 may also include:address decode logic 34, word line select circuitry 36, bit line selectcircuitry 38, analog program circuitry 40, program verify senseamplifiers 42, and/or read sense amplifiers 44, although this is merelyone example of a non-limiting embodiment. The address decode logic 34may decode address information received from the address register 24 toidentify particular memory cells that may be subject to an informationtransfer operation. The address decode logic 34 may provide thisinformation to the word line select circuitry 36 and/or the bit lineselect circuitry 38 which may be operative for electronically selectingappropriate word lines and/or bit lines, respectively, to provide accessto memory cells. The analog program circuitry 40, the program verifysense amplifiers 42, and/or the read sense amplifiers 44 may compriseread and write circuits that may be operative in some implementationsfor transferring information into addressed memory cells during writeoperations and/or retrieving information from addressed memory cellsduring read operations. More specifically, in an example implementation,the analog program circuitry 40 may write information to addressedmemory cells during a write operation, the program verify senseamplifiers 42 may verify information written to addressed memory cellsduring write operations, and/or the read sense amplifiers 44 may beoperative for sensing information stored in addressed memory cellsduring read operations, for example.

In various embodiments, different types of nonvolatile memorytechnologies may be used for the memory core 32. For example,technologies such as phase change memory, NOR flash memory, NAND flashmemory, resistive memory, spin torque memory, and/or combinationsthereof may be employed in various embodiments in accordance withclaimed subject matter. In at least one implementation, phase changememory (PCM) technology may be used for the memory core 32. In a phasechange memory, higher voltages may be employed to write information tomemory cells than may be employed to read information from memory cells.For example, write operations may involve a change in state of a phasechange material (for example, from a crystalline state to an amorphousstate, etc.) in comparison with read operations. Read operations may beperformed in these memory devices at lower voltage levels than used forwrite operations; however, leakage currents may exist within phasechange memory devices if higher voltage levels are present on wordlines, for example. If so, leakage currents may act to increase powerconsumption and, therefore, are typically undesirable.

In one possible leakage mechanism during a read operation, for example,leakage current may flow from word line select circuitry, such asthrough a deselected word line, through bit line select circuitryassociated with a deselected bit line crossing the deselected word line(for example, through a reverse biased base-to-emitter junction of abipolar junction transistor (BJT) selector device, as may be used in PCMmemory), through other bit line select circuitry associated with thedeselected bit line and a selected word line (for example, through anemitter-to-base junction of a BJT selector device), and through theselected word line to word line select circuitry associated therewith. Asimilar leakage path may exist for multiple memory cells in a memorycore that may be associated with a deselected word line and a deselectedbit line, potentially resulting in leakage current and undesirable powerconsumption. By using a lower voltage on a deselected word line(s)during read operations in a PCM memory, for example, leakage current maybe reduced, thus potentially reducing power consumption withoutsignificant degradation in performance.

The word line bias circuitry 30 may include circuitry operative forsetting (including, but not limited to, for example, maintaining orchanging) a bias level (for example, a current or voltage level)associated with a deselected word line(s) of the memory core 32 forvarious modes of operation of the nonvolatile memory 14. As describedpreviously, in some implementations, the nonvolatile memory 14 mayoperate in a lower-latency read/write mode or a lower-power read mode.Other additional or alternative modes of operation may also besupported. In one possible approach, the word line bias circuitry 30 mayset a bias level in response to mode information, such as received froma memory access device, such as the processor 12. In the absence ofreceiving such information, the nonvolatile memory 14 may operate in adefault mode of operation. For example, in at least one embodiment, thenonvolatile memory 14 may operate in a lower-latency read/write mode ofoperation by default. The nonvolatile memory 14 may change to, forexample, a lower-power read mode of operation in response to modeinformation (for example, an appropriate mode indication), such asreceived from the processor 12, for example. If a lower-power read modeindication is received from the host processor 12, the word line biascircuitry 30 may change a bias level associated with one or moredeselected word line(s) of the memory core 32 to operate in alower-power read mode. In another possible implementation, a lower-powerread mode may comprise a default mode of operation and the word linebias circuitry 30 may change a bias level of one or more deselected wordline(s) if a lower-latency read/write mode indication is received, suchas from the processor 12. In one implementation, the word line biascircuitry may return to a default mode of operation if a valid modesignal, for example, is not provided by the processor 12 (assuming, forexample, two possible modes of operation). If three or more modes ofoperation are supported, a larger number of different mode signals maybe used.

In at least one implementation, a value within a register, such as asingle or multiple bit register, of the overlay window 28 may be set inresponse to mode information, such as received from the processor 12. Inone possible operational scenario, for example, the processor 12 maydrive the nonvolatile memory 14 to change from a default lower-latencyread/write mode to a lower-power read mode. The processor 12 mayinitiate state information to be written to an appropriate mode registerof the command interface 20 to enable the overlay window 28. The commandinterface 20 may write a bit (for example, a logic one) to a register ofthe overlay window 28 to indicate a desired mode of operation for thenonvolatile memory 14, such as, for example, a lower-power read mode. Inone approach, a register of the overlay window 28 may be mapped directlyor indirectly to the word line bias circuitry 30, which may proceed tochange a bias level associated with one or more deselected word line(s)of the memory core 32 in accordance with a lower-power read mode. Aftera small delay (for example, approximately 500 nanoseconds in oneimplementation), the nonvolatile memory 14 may operate in a lower-powerread mode.

The processor 12 may initiate (for example, instruct) a return of thenonvolatile memory 14 to a lower-latency read/write mode. For example,the command interface 20 may write a different bit (for example, a logiczero) to a register of the overlay window 28 to indicate another desiredmode of operation for the nonvolatile memory 14, such as a lower-latencyread/write mode, for example. In some implementations, a timer functionmay be implemented such that the nonvolatile memory 14 may switch backto a default mode of operation after a time period. As will beappreciated, many alternative techniques for providing mode informationfrom the processor 12 to the nonvolatile memory 14 to set a desired modeof operation may be used. An overlay window approach is just oneillustrative possibility.

In some implementations, the word line bias circuitry 30 of FIG. 1 mayinclude a linear down regulator (LDR), an example of which will bedescribed later in connection with FIG. 2. A LDR may be operative forlowering a voltage level of one or more deselected word line(s) of thememory core 32 by linear down regulation if a desired mode of operationof the nonvolatile memory 14 (as indicated by the processor 12) changesfrom one mode (for example, a lower-latency read/write mode) to anothermode (for example, a lower-power read mode). In an alternativeembodiment, the LDR may provide up regulation rather than downregulation. An LDR may also be operative for returning a word linevoltage to a higher voltage level if a desired mode of operationidentified by the processor 12 changes back. In some implementations, aLDR may have capability to support three or more possible modes ofoperation.

FIG. 2 is a schematic diagram illustrating an example of a linear downregulator (LDR) circuit 50 according to an example implementation. TheLDR circuit 50 may be used, for example, as the word line bias circuitry30 of FIG. 1 in some implementations. As illustrated in FIG. 2, the LDRcircuit 50 may include: a lower-latency voltage reference circuit 52; alower-power voltage reference circuit 54; first, second, third, andfourth buffer amplifiers 56, 58, 60, 62; first, second, third, andfourth switches 64, 66, 68, 70; an N-type insulated-gate field effecttransistor (IGFET) 72; and a P-type IGFET 74. IGFETs can be MOSFETs, butgates can be made from materials other than metals, such as polysilicon,and insulators can be made of materials other than silicon oxide. In oneembodiment, the N-type IGFET 72 is a triple-well type of device that iswell-known in the art. The use of the triple-well configuration reducesleakage current and lowers the body effect, both of which are desirableattributes. Output nodes (for example, drain and source terminals) ofthe N-type IGFET 72 and the P-type IGFET 74 are connected in a linebetween a first power node 76 and a second power node 78 in thisillustrative example. During operation, the first power node 76 maycarry a first power source potential V_(HH) and the second power node 78may carry a second power source potential Vn_(ss). For example, thefirst source potential V_(HH) may be higher (for example, more positive)than the second source potential Vss, although the opposite may be thecase in other embodiments. The N-type IGFET 72 may be connected betweenthe first power node 76 and an intermediate node 80. The P-type IGFET 74may be connected between the intermediate node 80 and the second powernode 78. The intermediate node 80 may be coupled to a deselected wordline(s) 82 of an associated memory core.

The lower-latency voltage reference circuit 52 may generate a highervoltage signal at two output nodes 84, 86 thereof, which may be providedto input nodes of first and third buffer amplifiers 56, 60. In onepossible implementation, the level of the two higher voltage outputsignals may be approximately equal to the desired higher voltagedeselected word line voltage (for example, −4 volts in oneimplementation). Likewise, the lower-power voltage reference circuit 54may generate a lower voltage signal at two output nodes 88, 89 andprovide these lower voltage signals to input nodes of the second andfourth buffer amplifiers 58, 62. The two lower voltage signals may, insome embodiments, have substantially the same voltage level as oneanother. In the illustrated embodiment, the level of the two lowervoltage output signals may be approximately equal to the desired lowvoltage deselected word line voltage (for example, −1.2 volts in oneimplementation). In at least one implementation, the buffer amplifiers56, 58, 60, 62 may comprise unity gain devices and the output voltagelevels of the buffers may substantially match the input voltage levels.Non-unity gain buffer amplifiers may alternatively be used. It should beappreciated that, as used herein, the phrases “high” and/or “low” orsimilar language, are used in a relative sense with respect to oneanother and are not intended to imply absolute levels.

The operation of the lower-latency voltage reference circuit 52 and thelower-power voltage reference circuit 54 will now be described. In theillustrated embodiment, the lower-latency voltage reference circuit 52includes an operational amplifier 130, an N-type IGFET 132, a voltagedivider 134, and an optional P-type IGFET 136. In one embodiment, theN-type IGFET 132 is a triple well device or is a scaled version of theN-type IGFET 72 for relatively good tracking over process, voltage, andtemperature variations. In one embodiment, the voltage divider 134 isimplemented by an on-chip resistance having relatively many taps, andfuses, anti-fuses, analog multiplexers, switches or the like are used toselect a particular tap for the inverting input of the operationalamplifier 130 during production to set a desired output voltage(s) atthe output nodes 84, 86 of the lower-latency voltage reference circuit52 or at the intermediate node 80 of the LDR circuit 50. Alternatively,laser trimming can be used to set a portion of the resistance of thevoltage divider 134. In this manner, the voltage divider 134 can beconsidered to be variable or programmable.

In one embodiment, an integrated circuit including the lower-latencyvoltage reference circuit 52 also includes a bandgap voltage referencegenerating a reference voltage of about 2.3 volts. Of course, othervoltage levels and other types of voltage references can be used. This2.3 volt reference voltage is labeled VREF1 and is provided as an inputto a non-inverting input of the operational amplifier 130. Theoperational amplifier 130 is powered from a voltage of a programmingvoltage rail VHPRG, which can be a higher voltage than a voltage of avoltage rail VHH used for powering the lower-voltage mode components.

With the P-type IGFET 136 on or enabled by having its gate being drivenlow, the lower-latency voltage reference circuit 52 operates as follows.An output of the operational amplifier 130 drives a gate of the N-typeIGFET 132, which operates as a source follower. A voltage drop existsfrom the gate to the source of the N-type IGFET 132, which drives oneend of the voltage divider 134 and is provided as an output at theoutput node 86 of the lower-latency voltage reference circuit 52. Theother end of the voltage divider is grounded (VSS). A divided voltagefrom a tap of the voltage divider 134 is provided as an input to theinverting input of the operational amplifier 130. Due to the operationof the feedback loop, the voltages at the non-inverted input and theinverting input of the operational amplifier 130 are approximatelyequal. Thus, a voltage VREF1 is present at the tap of the voltagedivider. Thus, if the cumulative resistance of the voltage divider 134is R1+R2, then the voltage V₈₆ at the output node 86 is approximately asexpressed in Eq. 1.

$\begin{matrix}{V_{86} = {{\frac{{R\; 1} + {R\; 2}}{R\; 2} \cdot {VREF}}\; 1}} & {{Eq}.\mspace{14mu} 1}\end{matrix}$

The voltage V₈₄ at the output node 84 is a gate-to-source voltage drophigher than the voltage V₈₆ at the output node 86. When the LDR circuit50 is in the higher-power mode, the voltage V₈₄ drives the gate of theN-type IGFET 72, and the voltage V₈₆ drives the gate of the P-type IGFET74. There are two gate-to-source voltage drops between the gate of theN-type IGFET 72 and the gate of the P-type IGFET 74, and there is onlyone gate-to-source voltage drop difference in the driving voltages V₈₄,V₈₆. This difference in driving voltages advantageously provides a “deadzone,” which helps to prevent mutual conduction between the N-type IGFET72 and the P-type IGFET 74 to reduce power consumption. This “dead zone”is tolerable because due to leakage currents, it is the N-type IGFET 72that sets and maintains the voltage at the intermediate node 80. TheP-type IGFET 74 is used to speed up transitions between modes. Othertechniques to reduce mutual conduction are also applicable and will bereadily determined by one of ordinary skill in the art.

During production, the LDR circuit 50 can be placed in the higher-powermode, and an appropriate tap of the voltage divider 134 can be selectedfor closing the feedback loop of the operational amplifier 130.Alternatively, a portion of the resistance of the voltage divider can belaser trimmed. The voltage on the intermediate node 80 can be monitoredwhile different taps of the voltage divider 134 are temporarilyselected. A tap corresponding to a desirable voltage for theintermediate node 80 can then be permanently selected for field use. Inone embodiment, the voltage for the intermediate node 80 is adjusted towithin a range of about 2.5 volts to about 4.5 volts.

The operation of the lower-power voltage reference circuit 54 is similarto that of the lower-latency voltage reference circuit 52. In theillustrated embodiment, the topology of the voltage reference circuits52, 54 provides voltage gain over an input voltage reference. However,in the lower-power mode, the voltage for the intermediate node 80 shouldbe in a range of about 1.0 volts to about 1.8 volts. Thus, the 2.3 voltreference VREF1 used by the lower-latency voltage reference circuit 52is too high. A second voltage reference VREF2 is generated from thefirst voltage reference VREF1 via a voltage divider. In the illustratedembodiment, the voltage of the second voltage reference VREF2 is about1.0 volts.

The operation of the lower-power voltage reference circuit 54 will nowbe described. In the illustrated embodiment, the lower-power voltagereference circuit 54 includes an operational amplifier 140, an N-typeIGFET 142, a voltage divider 144, and an optional P-type IGFET 146. Inone embodiment, the N-type IGFET 142 is also a triple well device or isa scaled version of the N-type IGFET 72 for relatively good trackingover process, voltage, and temperature variations. The voltage divider144 can be similar to the voltage divider 134. A particular tap of thevoltage divider can be selected as an input to the inverting input ofthe operational amplifier 140 during production to set a desired outputvoltage(s) at the output nodes 88, 89 of the lower-power voltagereference circuit 54 or at the intermediate node 80 of the LDR circuit50.

During production, the LDR circuit 50 can be placed in the lower-powermode, and an appropriate tap of the voltage divider 144 can be selectedfor closing the feedback loop of the operational amplifier 140.Alternatively, a portion of the resistance of the voltage divider can belaser trimmed. The voltage on the intermediate node 80 can be monitoredwhile different taps of the voltage divider 144 are temporarilyselected. A tap corresponding to a desirable voltage for theintermediate node 80 can then be permanently selected for field use. Inone embodiment, the voltage for the intermediate node 80 is adjusted towithin a range of about 1.0 volts to about 1.8 volts.

As described earlier, the N-type IGFET 72 sets the voltage at theintermediate node 80. To save power, portions of the LDR circuit 50 canbe disabled. For example, an appropriate gate voltage for the N-typeIGFET 72 can be stored on a capacitor 71. The capacitor 71 represents acapacitance that is more than a mere parasitic capacitance. Afterappropriate gate drive levels are established, the switches 64, 66, 68,70 can be opened and the N-type IGFET 72 should maintain an appropriatevoltage level for the intermediate node 80. An added capacitance for theP-type IGFET 74 is not needed as in the illustrated embodiment, theP-type IGFET 74 is used only for transitions and should be relativelynon-conducting in steady-state operation. Of course, other components,such as a pull-up resistance for the gate of the P-type IGFET 74 can beused to ensure that the P-type IGFET 74 is not leaking current duringnormal operation, that is, in periods other than transitions. Inaddition, the P-type IGFETs 136, 146 can be disabled by bringing theirgate voltages high such that the signal ENABLE is high. This preventscurrent from flowing through, for example, the voltage dividers 134,144. Additionally, the ENABLE signals can be independently controlledsuch that, for example, the P-type IGFET 136 is not enabled when thelower-power mode is being set, and the P-type IGFET 146 is not enabledwhen the higher-power mode is being set.

In one embodiment, slew rates are also controlled. The various wordlines 82 coupled to the intermediate node 80 can include a substantialamount of parasitic capacitance. The rapid changing of voltage on theintermediate node 80 can then result in a relatively large current spikeon the VHH and/or VSS supplies, which could be damaging to traces,metallization lines, bond wires, or the like and can be disruptive toother circuits. In one embodiment, slew rate control is built into thebuffer amplifiers 56, 58, 60, 62 such that voltages on the intermediatenode 80 are relatively gradually changed. A slew rate control can beimplemented by, for example, a low-pass filter.

A wide variety of variations to the lower-latency voltage referencecircuit 52 and the lower-power voltage reference circuit 54 exist. Forexample, in one alternative, depending on the availability of suitablevoltage references, one or more voltage dividers can be used to generateappropriate voltage levels for one or more of the outputs of thelower-latency voltage reference circuit 52 and/or lower-power voltagereference circuit 54. In an alternative embodiment, rather thanswitching between reference voltages using the switches 64, 66, 68, 70,having two pairs of buffer amplifiers 56, 58, 60, 62, and having twosubstantially similar voltage reference circuits 52, 54, only one of thevoltage reference circuits 52, 54 is present and the reference voltageapplied to an input of the operational amplifier 130 or the operationalamplifier 140 is switched to vary the voltage at the intermediate node80.

First, second, third, and fourth switches 64, 66, 68, 70, are operativefor appropriately providing control signals to the gate nodes of theN-type IGFET 72 and the P-type IGFET 74. As will be described in greaterdetail, in the illustrated implementation, first and third switches 64,68 may open and close together, and the second and fourth switches 66,70 may open and close together. The switches 64, 66, 68, 70 may becontrolled, for example, in response to mode information, such asreceived from a processor. For example, in one approach, the switches64, 66, 68, 70 may be controlled based at least in part on a state of abit (for example, a state of an lpwrmode signal) stored within aregister of the overlay window 28. If the lpwrmode signal is set atlogic zero, a memory device may, for example, operate in a lower-latencyread/write mode. In such a case, the first and third switches 64, 68 mayclose and the second and fourth switches 66, 70 may open, thus providinghigher voltage level control signals (from the lower-latency voltagereference circuit 52) to the gate nodes of the N-type IGFET 72 and theP-type IGFET 74. The lower-power voltage reference circuit 54 and thesecond and fourth buffer amplifiers 58, 62 may be disabled to conserveenergy. Higher voltage level control signals provided to the gate nodesof the N-type IGFET 72 and the P-type IGFET 74 may result in a highervoltage of one or more deselected word line(s) 82 of a memory core (forexample, −2.5-4.5 volts in one at least implementation) during thelower-latency read/write mode.

If the lpwrmode signal in the overlay window 28 is subsequently changed,such as to logic one in response to (for example, based at least in parton) mode information, received from a processor, for example, a memorydevice may change to a lower-power read mode of operation. If thisoccurs, the first switch 64 and the third switch 68 may open, thusremoving high voltage level control signals from gate nodes of theN-type IGFET 72 and the P-type IGFET 74. The second and fourth switches66, 70, on the other hand, may close, thereby providing lower voltagecontrol signals at output nodes of the second and fourth buffers 58, 62(for example, −1.2 volts) to gate nodes of the N-type IGFET 72 and theP-type IGFET 74. As will be described in greater detail, this may resultin a lower voltage of one or more deselected word line(s) 82 of a memorycore (for example, −1.0-1.8 volts in at least one implementation) duringa lower-power read mode. The lower-latency voltage reference circuit 52and the first and third buffer amplifiers 56, 60 may be disabled duringa lower-power read mode of operation. It should be appreciated thatarrangement and/or operation of the first, second, third, and fourthswitches 64, 66, 68, 70 in FIG. 2 represents one illustrative techniquefor providing control signals to gate nodes of the N-type IGFET 72 andthe P-type IGFET 74. Other techniques and/or other providingarrangements may alternatively be used.

If a lower-power read mode is initiated, a lower voltage control signal(for example, −1.2 volts) provided by the second and fourth bufferamplifiers 58, 62 may place a large Vs, bias across the P-type IGFET 74.A deselected word line voltage may still be high (for example, −4 volts)and the P-type IGFET 74 as a result mayx pull word line voltage down toabout −1.2 volts plus a threshold voltage of the P-type IGFET 74. TheP-type IGFET 74 may be selected to provide a suitable amount ofdisplacement current from one or more deselected word line(s) to ground.After the P-type IGFET 74 has pulled a deselected word line voltagedown, both the N-type IGFET 72 and the P-type IGFET 74 may begin to turnoff. Leakage current may pull a word line down to a state to satisfy atransconductance of the N-type IGFET 72. It should be appreciated thatillustrated circuit architecture of the LDR circuit 50, shown in FIG. 2,may comprise one possible example of an LDR circuit that may be used.Other architectures may alternatively be used.

FIG. 3 is a block diagram illustrating an example multiple-corenonvolatile memory apparatus 90 according to an example implementation.In one possible application, the multiple-core nonvolatile memoryapparatus 90 may be used in place of, or in addition to, the nonvolatilememory 14 of FIG. 1 to provide information storage and/or retrievalfunctions for the processor 12. Other applications also exist. Asillustrated, the multiple-core nonvolatile memory apparatus 90 mayinclude: a command interface 20 having command decode functionality 22,an overlay window 28, a number of phase change memory (PCM) cores 92,94, 96, 98, and a number of LDR circuits 100, 102, 104. Although notshown, the multiple-core nonvolatile memory apparatus 90 may alsoinclude address and input/output registers as, for example describedpreviously in connection with FIG. 1. In one possible implementation,the PCM cores 92, 94, 96, 98 may be arranged into a bank and may or maynot be included in a common interoperable platform-type structure (forexample, chip, substrate, or board), such as with the processor 12.Although illustrated as PCM memory cores, it should be appreciated thatother memory technologies, or combinations of different technologies,may be utilized in other implementations. In the illustratedimplementation, there are four memory cores 92, 94, 96, 98 associatedwith the multiple-core nonvolatile memory apparatus 90. It should beappreciated that any number of cores (two or more) may be used in themultiple-core nonvolatile memory apparatus 90 and, for example, in someinstances, hundreds or even thousands of cores may be utilized.

The command interface 20, the command decode functionality 22, and theoverlay window 28 of FIG. 3 perform substantially the same operationsdescribed earlier in connection with FIG. 1. However, operations may beperformed for multiple memory cores in this example. As shown in FIG. 3,the first, second, and third PCM cores 92, 94, 96 within themultiple-core nonvolatile memory apparatus 90 have corresponding LDRcircuits 100, 102, 104. The LDR circuits 100, 102, 104 provide a similaroperations to the LDR circuit 50, described previously. In one possibleoperational scenario, a processor coupled to the multiple-corenonvolatile memory apparatus 90 may provide mode information to theapparatus 90 to set modes of the PCM cores 92, 94, 96. In at least onepossible implementation, a processor may be permitted by the memoryapparatus 90 to specify a different mode of operation for a core, suchas the cores 92, 94, 96 that have corresponding LDR circuits 100, 102,104 (or some other form of dynamically settable word line biascircuitry). That is, in an implementation, the LDR circuits 100, 102,104 may operate independently of one another. In one approach, one ormore bit registers within the overlay window 28 may be assignedrespective LDR circuits 100, 102, 104 to identify a present desired modeof operation for a corresponding memory core 92, 94, 96. Othertechniques for providing mode information, for example, from aprocessor, may alternatively be used.

As illustrated in FIG. 3, in various implementations, some of memorycores within the multiple-core nonvolatile memory apparatus 90 may havecorresponding LDR circuitry. That is, some cores (for example, PCM core98 in FIG. 3) may operate without corresponding dynamically settableword line bias circuitry. In an implementation, mode of operation ofsome cores may not, therefore, be set by a processor. Some memory coresmay, for example, be capable of operating in a single mode of operation(for example, a lower-latency read/write mode). Other cores may operatein a lower-power read mode much of the time, but may change to alower-latency read/write mode so as to be written to. Many othervariations may be implemented.

In some embodiments, a multiple-core memory apparatus may be providedthat utilizes multiple memory structures, with structures includingmultiple memory cores. Some or all of cores of a structure may havecorresponding dynamically settable word line bias circuitry, forexample. Thus, a coupled processor may be able to set mode of operationfor applicable cores. In one approach, a processor may be able to set amode of operation of memory cores in a multi-structure system on acore-by-core basis by providing respective mode information to a memoryfor one or more cores having distinctly corresponding word line biascircuitry. In another possible approach, a processor may be able to setmode of operation of memory cores in a multi-structure system on astructure-by-structure basis. That is, a processor may identify a modeof operation for a structure and corresponding memory cores may operatein an identified mode. A structure may have word line bias circuitry toset a bias level for memory cores of the structure, or sub-groups ofcores of a structure may also share word line bias circuitry. In atleast one embodiment, for example, two or more cores of a structure maybe coupled to corresponding word line bias circuitry to set a bias levelassociated with one or more deselected word lines of two or more cores.

In some multi-core, multi-structure embodiments, memory cores of one ormore of the memory structures may have no LDR circuitry, for example.Thus, a processor may not be able to set mode of operation of applicablecores, but claimed subject matter is not limited in scope to thisillustrative example. For example, in one possible implementation, coresof a particular structure that does not have LDR circuitry may operatein a lower-latency read/write mode. A processor for applications may usea structure where, for example: (1) lower-latency operation may bedesired and/or (2) multiple short random write operations may typicallybe interspersed with read operations. Another structure in an apparatusmay, for example, have applicable cores operating in a lower-power readmode. A structure may be used by a processor for, for example, readintensive applications. As described previously, if LDR or otherdynamically settable word line bias circuitry is provided for a memorycore, a core may nonetheless have a default mode of operation to be usedin the absence of receiving mode information from a processor. In atleast one implementation, different structures of a multiple-structurememory apparatus may use different default modes of operation for memorycores equipped with LDR circuitry. In a multiple-structure memoryapparatus implementation, any number of memory cores (for example, oneor more) may be provided for a structure and any number of structures(for example, two or more) may be used. In some multiple-structureimplementations, a thousand or more memory structures may be provided,different structures including a thousand or more memory cores.

FIG. 4 is a flowchart illustrating a method 110 for operating anapparatus, such as a computing system, according to an exampleimplementation. The order of blocks, such as the blocks 112-118,comprises an example order. Claimed subject matter is not limited inscope to illustrative or example embodiments. It will be appreciated bythe skilled practitioner that the illustrated method can be modified ina variety of ways. For example, in another embodiment, various portionsof the illustrated method can be combined, can be rearranged in analternate sequence, can be removed, or the like. Therefore, embodimentsin accordance with claimed subject matter may include all of, less than,or more than the blocks 112-118. A method, such as the method 110, maybe performed as a single method or as multiple methods. A decision maybe made to set an operational mode of a memory device, such asillustrated by, for example, the block 112. The decision may be made by,for example, a processor or other memory access device coupled to thenonvolatile memory. In one possible approach, the decision may be madebased, at least in part, on a performance criterion such as, forexample, power consumption. For example, a processor may decide tomaintain a mode of a nonvolatile memory or change a mode from alower-latency read/write mode to a lower-power read mode if a high levelof read activity for the nonvolatile memory is expected in the nearfuture, for example.

If a decision to change mode has been made, for example, modeinformation may be provided to a memory device, for example, to identifya desired mode change, such as illustrated by, for example, the block114. If a decision is made by a processor, for example, the modeinformation may be provided by a direct transfer from a processor, atransfer through an intermediary circuit or device, or a delivery fromanother circuit or device to a memory, such as at least partially undercontrol of a processor. Mode information may be as simple as a singlebit signaling that a mode is to be maintained or to be changed. Forexample, for a memory core capable of operating in two different modesof operation, a logic one may indicate that the mode is to be changedand a logic zero may indicate that the current mode is to be maintained.Alternatively, a logic zero may indicate that a first mode is to be usedand a logic one may indicate that a second mode is to be used. Morecomplex mode signaling schemes may also be used in some implementations.For example, multiple bits may be used if a memory is capable ofoperating in more than two different modes of operation. Multiple bitsmay also be used in some implementations if more than one memory corewithin a nonvolatile memory has a changeable mode (for example, morethan one memory core has associated LDR circuitry). Other forms of modeinformation may alternatively be used and claimed subject matter is notlimited in this regard.

Another method embodiment may comprise the blocks 116, 118. For example,a memory device may perform operations, such as those illustrated, forexample. Mode information may be received by a memory device from amemory access device external to the memory device (for example, aprocessor) as illustrated by, for example, the block 116. Receipt of themode information may encompass receipt directly or indirectly from anexternal memory access device (for example, receipt from another deviceunder full or partial control of the external memory access device). Inresponse to received mode information, mode of operation of thenonvolatile memory may be maintained or changed, such as illustrated by,for example, block 118. For example, in at least one embodiment, adeselected word line voltage of a memory core or of multiple memorycores of a memory device may be maintained or changed in response tomode information. In one possible scenario, for example, modeinformation may indicate a change in mode from a lower-latencyread/write mode to a lower-power read mode. In response, a nonvolatilememory may, for example, reduce a deselected word line voltage of amemory core. A deselected word line voltage may be reduced using, forexample, linear down regulation. In one possible approach, received modeinformation may affect one or more bit registers of an overlay window toactivate LDR circuitry. In at least one implementation, the LDR circuit50 of FIG. 2 or similar circuitry may be used to reduce a deselectedword line voltage of a memory device.

Apparatus, such as those in the form of memory devices, in accordancewith claimed subject matter herein may, for example, be used in anynumber of different applications. Memory devices may be incorporatedinto other apparatus, for example, computers, computer peripherals,personal digital assistants, cameras, telephones, cell phones or otherwireless devices, displays, chipsets, set top boxes, video games,vehicles, satellite communicators, internet servers, routers, basestations, network access devices, audio-video devices, or anycombination thereof. In one possible application, memory devices inaccordance with claimed subject matter may be used in one or moreapparatus in the form of data centers. Memory capacity used by datacenters appears to be large and growing. Memory structures or techniquesin accordance with claimed subject matter may lower energy costs and/orcooling costs in data centers, for example.

Methodologies in accordance with claimed subject matter may beimplemented by various techniques depending, at least in part, onapplications according to particular features or examples. For example,methodologies may be implemented in hardware, firmware, or combinationsthereof, along with software. In a hardware implementation, for example,a processing unit may be implemented within one or more applicationspecific integrated circuits (ASICs), digital signal processors (DSPs),digital signal processing devices (DSPDs), programmable logic devices(PLDs), field programmable gate arrays (FPGAs), processors, controllers,micro-controllers, microprocessors, electronic devices, or other devicesor units designed to perform functions such as those described herein,or combinations thereof.

As used herein, the word “connected” means a direct or indirectconductive connection between elements, the word “coupled” means thatelements are able to communicate with one another but are notnecessarily directly conductively connected (although the word alsoencompasses a conductive connection), and the phrase “connected in aline” means that nodes are interconnected in a line between two nodes,but are not necessarily connected as a series circuit (for example, allof the nodes in the line do not necessarily have the same currentflowing through them during circuit operation). Two nodes that are“connected in a line” are not necessarily directly conductivelyconnected to one another, that is, there may be one or more otherelements between the two nodes in the line. The phrase “connected in aline” does encompass two nodes that are directly or indirectlyconductively connected to one another in a line and also encompasses twonodes that are connected in series. The word “coupled,” as used herein,encompasses a situation where two nodes have one or more other nodesbetween them as long as there is electrical communication between thetwo nodes. The word “coupled” also encompasses a situation where twonodes can communicate through inductive, capacitive, or radio coupling.

In the preceding detailed description, numerous specific details havebeen set forth to provide a thorough understanding of claimed subjectmatter. However, it will be understood by those skilled in the art thatclaimed subject matter may be practiced without these specific details.In other instances, methods or apparatus that would be known by one ofordinary skill have not been described in detail so as not to obscureclaimed subject matter.

Some portions of the preceding detailed description have been presentedin terms of logic, algorithms, or symbolic representations of operationson binary states stored within a memory of a specific apparatus (forexample, a special purpose computing device or platform). In the contextof this particular specification, the term specific apparatus or thelike includes a general purpose computer once it may be programmed toperform particular functions pursuant to instructions from programsoftware. Algorithmic descriptions or symbolic representations areexamples of techniques used by those of ordinary skill in the signalprocessing or related arts to convey the substance of their work toothers skilled in the art. An algorithm may be here, and generally, maybe considered to be a self-consistent sequence of operations or similarsignal processing leading to a desired result. In this context,operations or processing involve physical manipulation of physicalquantities. Typically, although not necessarily, such quantities maytake the form of electrical or magnetic signals capable of being stored,transferred, combined, compared or otherwise manipulated as electronicsignals representing information. It has proven convenient at times,principally for reasons of common usage, to refer to such signals asbits, data, values, elements, symbols, characters, terms, numbers,numerals, information, or the like. It should be understood, however,that all of these or similar terms are to be associated with appropriatephysical quantities and are merely convenient labels. Unlessspecifically stated otherwise, as apparent from the followingdiscussion, it may be appreciated that throughout this specificationdiscussions utilizing terms such as “processing,” “computing,”“calculating,” “determining”, “establishing”, “obtaining”,“identifying”, “selecting”, “generating”, or the like may refer toactions or processes of a specific apparatus, such as a special purposecomputer or a similar special purpose electronic computing device. Inthe context of this specification, therefore, a special purpose computeror a similar special purpose electronic computing device may be capableof manipulating or transforming signals, typically represented asphysical electronic or magnetic quantities within memory devices,registers, or other information storage devices, transmission devices,or display devices of the special purpose computer or similar specialpurpose electronic computing device. In the context of this particularpatent application, the term “specific apparatus” may include a generalpurpose computer once it may be programmed to perform particularfunctions pursuant to instructions from program software.

In some circumstances, operation of a memory device, such as a change instate from a binary one to a binary zero or vice-versa, for example, maycomprise a transformation, such as a physical transformation. Withparticular types of memory devices, such a physical transformation maycomprise a physical transformation of an article to a different state orthing. For example, but without limitation, for some types of memorydevices, a change in state may involve an accumulation and storage ofcharge or a release of stored charge. Likewise, in other memory devices,a change of state may comprise a physical change or transformation inmagnetic orientation or a physical change or transformation in molecularstructure, such as from crystalline to amorphous or vice-versa. In stillother memory devices, a change in physical state may involve quantummechanical phenomena, such as, superposition, entanglement, or the like,which may involve quantum bits (qubits), for example. The foregoing maybe not intended to be an exhaustive list of all examples in which achange in state for a binary one to a binary zero or vice-versa in amemory device may comprise a transformation, such as a physicaltransformation. Rather, the foregoing are intended as illustrativeexamples.

One embodiment includes an apparatus, the apparatus including: a memorycore having memory cells operatively accessible via access lines, thememory core being capable of operating in multiple modes of operationincluding at least a lower power read mode and a lower latencyread/write mode, wherein the lower power read mode has lower powerconsumption than the lower latency read/write mode; and access line biascircuitry configured to set a bias level associated with a deselectedaccess line of the memory core, wherein the bias level is set inresponse to mode information.

One embodiment includes an apparatus, wherein the apparatus includes: aplurality of memory cores having at least a first memory core and asecond memory core; first access line bias circuitry coupled to thefirst memory core configured to provide a bias level associated with adeselected access line of the first memory core; and second access linebias circuitry coupled to the second memory core configured to provide abias level associated with a deselected access line of the second memorycore; wherein the first and second access line bias circuitry configuredto operate independently of one another so that the bias levelassociated with the deselected access line of the first memory core iscapable of being different from the bias level associated with thedeselected access line of the second memory core.

One embodiment includes an apparatus, the apparatus including: a memoryaccess device to read information from and write information to a memorydevice, the memory access device being capable of dynamically setting amode of operation of a memory core of the memory device to manage powerconsumption of the memory.

One embodiment includes a machine-implemented method, the methodincluding: receiving mode information from a memory access device at amemory device; and lowering a deselected access line voltage of a memorycore of the memory device if the mode information indicates a modechange for the memory core from a lower latency read/write mode ofoperation to a lower power read mode of operation.

While there has been illustrated or described what are presentlyconsidered to be example features, it will be understood by thoseskilled in the art that various other modifications may be made, orequivalents may be substituted, without departing from claimed subjectmatter. Additionally, many modifications may be made to adapt aparticular situation to teachings of claimed subject matter withoutdeparting from central concept(s) described herein.

Therefore, it may be intended that claimed subject matter not be limitedto particular examples disclosed, but that such claimed subject mattermay also include all aspects falling within the scope of appendedclaims, or equivalents thereof.

1. A method, comprising: operating a memory device in a low voltage mode, the memory device configured to operate in the low voltage mode and a high voltage mode different than the low voltage mode; determining a bias level of a word line of the memory device based at least in part on the memory device operating in the low voltage mode; and accessing a memory cell of the memory device based at least in part on the bias level.
 2. The method of claim 1, further comprising: determining an information transfer parameter associated with the memory cell of the memory device, wherein operating in the low voltage mode is based at least in part on the information transfer parameter.
 3. The method of claim 1, further comprising: determining whether a predicted number of write operations performed by the memory device satisfies a threshold, wherein operating in the low voltage mode is based at least in part on the predicted number of write operations satisfying the threshold.
 4. The method of claim 1, further comprising: initiating operation of the memory device in the high voltage mode based at least in part on an amount of power consumed by the memory device, an amount of latency in one or more access operations, a number of memory cells in the memory device, or a combination thereof.
 5. The method of claim 1, wherein: the low voltage mode is a read-only mode; and the high voltage mode is a read/write mode.
 6. The method of claim 1, wherein: the low voltage mode is a low-power mode; and the high voltage mode is a low-latency mode.
 7. The method of claim 1, further comprising: identifying data to be written to the memory cell of the memory device; determining that the low voltage mode that the memory device is operating in is a read-only mode; initiating operation of memory device in the high voltage mode; and writing the identified data to the memory cell while the memory device is operating in the high voltage mode.
 8. The method of claim 1, further comprising: determining a bias level of a deselected word line of the memory device based at least in part on operating the memory device in the low voltage mode, wherein accessing the memory cell is based at least in part on the bias level of the deselected word line.
 9. The method of claim 1, further comprising: enabling an overlay window based at least in part on determining the bias level, wherein the overlay window is configured to control the bias level of the word line associated with the memory cell.
 10. The method of claim 9, further comprising: writing information to a register of a command interface based at least in part on the overlay window, wherein enabling the overlay window is based at least in part writing the information to the register.
 11. The method of claim 1, further comprising: controlling the bias level of the word line using a linear down regulator based at least in part on determining the bias level.
 12. A method, comprising: operating, by a memory device, in a low voltage mode using a first bias level of a word line of the memory device; determining an information transfer parameter associated with a memory cell of the memory device; and initiating operation of the memory device in a high voltage mode different from the low voltage mode based at least in part on determining the information transfer parameter.
 13. The method of claim 12, further comprising: determining a second bias level of the word line of the memory device based at least in part on operating in the high voltage mode, the second bias level being different than the first bias level.
 14. The method of claim 13, further comprising: accessing the memory cell of the memory device based at least in part on the second bias level associated with the high voltage mode.
 15. The method of claim 12, wherein determining the information transfer parameter further comprises: determining that a predicted number of write operations of the memory device satisfies a threshold, wherein initiating the high voltage mode is based at least in part on the predicted number of write operations satisfying the threshold.
 16. The method of claim 12, wherein: the low voltage mode is a low-power mode; and the high voltage mode is a low-latency mode.
 17. A method, comprising: operating, by a memory device, in a low voltage mode; determining a first bias level of a word line of the memory device based at least in part on operating in the low voltage mode, the first bias level being less than a second bias level associated with a high voltage mode of the memory device; and determining a logic state stored on a memory cell of the memory device using the first bias level.
 18. The method of claim 17, further comprising: applying the first bias level to the word line during a read operation, wherein determining the logic state is based at least in part on applying the first bias level.
 19. The method of claim 17, further comprising: enabling an overlay window based at least in part on operating in the low voltage mode, wherein the overlay window is configured to control a bias level of the word line associated with the memory cell during an access operation.
 20. The method of claim 17, further comprising: activating a linear down regulator based at least in part on operating in the low voltage mode, wherein the linear down regulator is configured to generate the first bias level by reducing a voltage level associated with the second bias level. 